BT151D(2008) Просмотр технического описания (PDF) - STMicroelectronics
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BT151D Datasheet PDF : 10 Pages
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Characteristics
THBT15011, THBT20011, THBT27011
Table 5. Dynamic breakover voltages (transversal mode)
Type
Symbol
Test conditions(1)
THBT15011D
VBO
10/700μs
1.2/50μs
2/10μs
1.5kV
1.5kV
2.5kV
Rp=10Ω
Rp=10Ω
Rp=62Ω
IPP=30A
IPP=30A
IPP=38A
THBT20011D
VBO
10/700μs
1.2/50μs
2/10μs
1.5kV
1.5kV
2.5kV
Rp=10Ω
Rp=10Ω
Rp=62Ω
IPP=30A
IPP=30A
IPP=38A
THBT27011D
VBO
10/700μs
1.2/50μs
2/10μs
1.5kV
1.5kV
2.5kV
Rp=10Ω
Rp=10Ω
Rp=62Ω
IPP=30A
IPP=30A
IPP=38A
1. See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card.
Figure 4. Test circuit 1 for IBO and VBO parameters
Max Unit
190
190
V
200
270
270
V
280
360
360
V
400
220V 50Hz
K
ton = 20ms
Vout
R1 = 140Ω
R2 = 240Ω
DUT
VBO
measurement
1/4
IBO
measurement
TEST PROCEDURE
Pulse test duration (tp = 20ms):
● for Bidirectional devices = Switch K is closed
● for Unidirectional devices = Switch K is open
VOUT selection:
● Device with VBO < 200 V➔ VOUT = 250 VRMS, R1 = 140 Ω
● Device with VBO ≥ 200 V➔ VOUT = 480 VRMS, R2 = 240 Ω
4/10
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