IDB31 Просмотр технического описания (PDF) - General Semiconductor

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IDB31

PLANAR SILICON BIDIRECTIONAL TRIGGER DIODE

General Semiconductor 

ELECTRICAL CHARACTERISTICS

at Tj = 25 ¡C, unless otherwise specified; electrical characteristics applicable in both, forward and reverse direction

Breakover Voltage

see Fig. 1

Breakover Voltage Symmetry

see Fig. 1

Dynamic Breakback Voltage

(IBO to IF=10mA), see Fig. 1

Output Voltage

see Fig. 2

Breakover Current

see Fig. 1

Rise time

see Fig. 3

Leakage current

VB=0,5·VBO max.

see Fig. 1

SYMBOL

VBO

MIN.

TYP.

30

32

½VBO1½-½VBO2½

-

-

½DV½

5

8

VO

5

-

IBO

4

20

tr

-

100

IB

-

-

MAX.

34

±2

-

-

50

-

0.5

UNIT

Volts

Volts

Volts

Volts

mA

ns

mA

FIG. 1 - CURRENT-VOLTAGE CHARACTERISTICS

+IF

10mA

-V

VBO1

IBO

IB

+V

0.5 VBO

DV

VBO2

-IF

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