THBT200S Просмотр технического описания (PDF) - STMicroelectronics
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THBT200S Datasheet PDF : 7 Pages
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THBT200S
Fig. 1 : Relative variation of holding current versus Fig. 2 : Surge peak current versus overload dura-
junction temperature.
tion.
IH [ Tj ]
1.0 IH [ Tj = 25°C ]
0.8
0.6
0.4
0.2
Tj (°C)
0.0
0 20 40 60 80 100 120 140
ITSM(A)
40
30
F=50Hz
Tj initial=25°C
20
10
0
1E- 2
1E-1
t(s)
1E+0
1E+1
1E+2
1E+3
Fig. 3 : Peak on state voltage versus peak on state Fig. 4 : Capacitance versus reverse applied volt-
current (typical values).
age (typical values).
1000
100
10
1
10
100 200
6/7
®
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