EIA1415A-4P Просмотр технического описания (PDF) - Excelics Semiconductor, Inc.
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EIA1415A-4P Datasheet PDF : 1 Pages
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Excelics
PRELIMINARY DATA SHEET
Internally Matched Power FET
EIA1415A-4P
14.0-15.35 GHz: 4Watt
• 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
• HIGH PAE( 25% TYPICAL)
• +36.0dBm TYPICAL P1dB OUTPUT POWER
• 7/6dB TYPICAL G1dB POWER GAIN
• NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Power Added Efficiency at 1dB compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Id1dB
IP3
Drain Current at 1dB Compression
Output 3rd Order Intercept Point
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Idss
Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=24mA
BVgd Drain Breakdown Voltage Igd=9.6mA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
EIA1415-4P
MIN TYP MAX
35.0 36.0
6
7
25
1800
43
2200 2880 3400
3000
-1.0 -2.5
-13
-15
4.5
UNIT
dBm
dB
%
mA
dBm
mA
mS
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
Ids
Drain Current
-8V
-3V
Idss
3120mA
Igsf
Forward Gate Current
360mA
60mA
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
35dBm
175oC
-65/175oC
@ 3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
30W
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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