HMC226 Просмотр технического описания (PDF) - Hittite Microwave

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HMC226

GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz

Hittite Microwave 

11

HMC226 / 226E

v03.0505

UED Outline Drawing

GaAs MMIC +3V SOT26 TRANSMIT /

RECEIVE SWITCH, DC - 2 GHz

DISCPORONTDIUNCT Not Recommended for New Designs

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS].

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

Package Information

Part Number

Package Body Material

HMC226

Low Stress Injection Molded Plastic

Lead Finish

Sn/Pb Solder

HMC226E

RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn

[1] Max peak reflow temperature of 235 °C

[2] Max peak reflow temperature of 260 °C

[3] 4-Digit lot number XXXX

Typical Application Circuit

Notes:

1. Set logic gate and switch Vdd = +3V to +5V and use

HCT series logic to provide a TTL driver interface.

2. Control inputs A/B can be driven directly with CMOS

logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS

logic gates.

3. DC Blocking capacitors are required for each RF port as

shown. Capacitor value determines lowest frequency of

operation.

4. Highest RF signal power capability is achieved with V

set to +10V. The switch will operate properly (but at

lower RF power capability) at bias voltages down to +3V.

MSL Rating

MSL1 [1]

MSL1 [2]

Package Marking [3]

H226

XXXX

226E

XXXX

11 - 4

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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