MJE5850G(2015) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

MJE5850G
(Rev.:2015)

Switch-mode Series PNP Silicon Power Transistors

ON Semiconductor 

MJE5850, MJE5851,

MJE5852

Switch-mode Series PNP

Silicon Power Transistors

The MJE5850, MJE5851 and the MJE5852 transistors are designed

for high−voltage, high−speed, power switching in inductive circuits

where fall time is critical. They are particularly suited for line operated

switch−mode applications.

Features

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

• Fast Turn−Off Times

• Operating Temperature Range −65 to + 150_C

• 100_C Performance Specified for:

♦ Reversed Biased SOA with Inductive Loads

♦ Switching Times with Inductive Loads

♦ Saturation Voltages

♦ Leakage Currents

• Complementary to the MJE13007 Series

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MJE5850

MJE5851

MJE5852

VCEO(sus)

Vdc

300

350

400

Collector−Emitter Voltage

MJE5850

MJE5851

MJE5852

VCEV

Vdc

350

400

450

Emitter Base Voltage

VEB

Collector Current − Continuous (Note 1)

IC

Collector Current − Peak (Note 1)

ICM

Base Current − Continuous (Note 1)

IB

Base Current − Peak (Note 1)

IBM

Total Power Dissipation

PD

@ TC = 25_C

Derate above 25_C

6.0

8.0

16

4.0

8.0

80

0.640

Vdc

Adc

Adc

Adc

Adc

W

W/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg – 65 to 150 _C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2015

1

January, 2015 − Rev. 7

www.onsemi.com

8 AMPERE

PCP SILICON

POWER TRANSISTORS

300−350−400 VOLTS

80 WATTS

COLLECTOR

2, 4

1

BASE

3

EMITTER

4

TO−220

CASE 221A−09

STYLE 1

1

23

MARKING DIAGRAM

MJE585xG

AY WW

MJE585x =

G

=

A

=

Y

=

WW

=

Device Code

x = 0, 1, or 2

Pb−Free Package

Assembly Location

Year

Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

Publication Order Number:

MJE5850/D

Share Link: