K3053 Просмотр технического описания (PDF) - NEC => Renesas Technology
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K3053 Datasheet PDF : 8 Pages
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2SK3053
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 13 A
RDS(on)2 VGS = 4.0 V, ID = 13 A
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 13 A
Drain Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss
VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
! Rise Time
td(on)
tr
ID = 13 A
VGS = 10 V
Turn-off Delay Time
td(off)
VDD = 30 V
Fall Time
tf
RG = 10 Ω
Total Gate Charge
QG
ID = 25 A
Gate to Source Charge
! Gate to Drain Charge
QGS
QGD
VDD = 48 V
VGS = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 25 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 25 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
28 45 mΩ
46 70 mΩ
1.0 1.6 2.0 V
8.0 16
S
10 µA
±10 µA
790
pF
240
pF
100
pF
20
ns
200
ns
65
ns
95
ns
20
nC
3.0
nC
6.5
nC
1.0
V
40
ns
45
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY !
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
RL
VGS
VGS
Wave Form
010 %
90 %
VDD
ID
90 %
ID
ID
0 10 %
Wave Form
90 %
10 %
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D12912EJ3V0DS
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