IXSH35N135A Просмотр технического описания (PDF) - IXYS CORPORATION

Номер в каталоге

Компоненты Описание

Список матч

IXSH35N135A

High Voltage, High speed IGBT

IXYS CORPORATION 

Symbol

gfs

IC(on)

Cies

Coes

Cres

Qg

Qge

Qgc

td(on)

tri

td(off)

tfi

Eoff

td(on)

tri

Eon

td(off)

tfi

E

off

RthJC

RthCK

IXSH 35N135A

IXSH 35N140A

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

IC = IC90; VCE = 10 V,

Pulse test, t £ 300 ms, duty cycle d £ 2 %

VGE = 15 V, VCE = 10 V

VCE = 25 V, VGE = 0 V, f = 1 MHz

IC = IC90, VGE = 15 V, VCE = 0.5 VCES

Inductive load, TJ = 25°C

VICC=E

=IC990,60VGVE,=R1G5=V2,.7L

=

Ω

100

µH

Switching times may increase for

VorCEin(cCrelaamsepd)

> 960

RG

V,

higher

TJ

Inductive load, TJ = 125°C

IC = IC90, VGE = 15 V, L = 100 µH

VCE = 960 V, RG = 2.7 Ω

Remarks: Switching times may

increase for

higher TJ or

iVnCcEre(aCslaemd pR)G>

960

V,

26

S

210

A

4150

pF

235

pF

55

pF

165

nC

45

nC

75

nC

40

ns

60

ns

200 400 ns

400 750 ns

12

mJ

40

ns

65

ns

4

mJ

200

ns

800

ns

18

mJ

0.42 K/W

0.25

K/W

TO-247 AD Outline

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106

4,850,072 4,931,844

5,017,508

5,034,796

5,049,961 5,187,117 5,486,715

5,063,307 5,237,481 5,381,025

Share Link: