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PJ2N5401CT

130V; 600mA PNP epitaxial silicon transistor

Promax Johnton 

PJ2N5401

PNP Epitaxial Silicon Transistors

AMPLIFIER TRANSISTO R

Collector-Base Voltage: VCEO=120V

• Collector Dissipation Pc=0.625W(Tc=25℃)

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

Characteristic

Symbol Rating Unit

Collector-base Voltage

Collector-Emitter

Voltage

Emitter-base Voltage

Collector Current (DC)

* Collector Dissipation

Junction Temperature

Storage Temperature

VCBO

VCEO

VEBO

IC

PC

TJ

T stg

130

V

120

V

5

V

0.6

A

0.625

W

150

℃

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

TO-92

P in : 1. Emitter

2. Base

3. Collector

ORDERING INFORMATION

Device

PJ2N5401CT

Operating Temperature

-20℃～+85℃

Package

T O-92

Characteristic

Collector-Base Breakdown Voltage

Collector- Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

Current Gain-Bandwidth product

Noise Figure

Symbol

Test Condition

Min Typ Max

BVCBO Ic=100μA,IE=0

130

BVCEO Ic=1mA,IB=0

120

BVEBO IE=10μA,IC=0

5

ICBO

VCB=200V,IE=0

100

IEBO

VEB=3V,Ic=0

50

HEF1

VCE=10V,IC=1 mA

30

HEF2

VCE=10V,IC=10mA

40

HEF3

VCE=10V,IC=50mA

40

VCE(SAT) Ic=10 mA,IB=1 mA

0.2

Ic=50 mA,IB=5 mA

0.5

VBE(SAT) Ic=10 mA,IB=1 mA

1

Ic=50 mA,IB=5 mA

1

Cob

VCB=20V,IE=0, f=1MHz

6

fT

VCE=5V,Ic=10mA

100

400

NF

VCE=5V,IC=0.2 mA

8

Rs=1K,f=10KHz

Unit

V

V

V

nA

nA

V

V

V

V

PF

MHz

dB

• Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.

1-3

2002/01.rev.A

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