HMC251MS8 Просмотр технического описания (PDF) - Hittite Microwave

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HMC251MS8

GaAs MMIC SMT DIVIDE-BY-2, 3.0 - 6.5 GHz

Hittite Microwave 

v01.0801

HMC251MS8

GaAs MMIC SMT

DIVIDE-BY-2, 3.0 - 6.5 GHz

UED Absolute Maximum Ratings

TIN Vdd

+8 Vdc

N Maximum Input Power

ISCO T (Vdd=+5.0Vdc)

20 dBm

D PRODUC Not Recommended for New Designs StorageTemperature

Operating Temperature

-65 to +150 °C

-40 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

10

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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