C67078-A5007-A2 Просмотр технического описания (PDF) - Infineon Technologies

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C67078-A5007-A2

Smart highside power switch TEMPFET®

Infineon Technologies 

TEMPFET® BTS 100

Electrical Characteristics

at Tj = 25 °C, unless otherwise specified.

Parameter

Symbol

min.

Values

Unit

typ.

max.

Static Characteristics

Drain-source breakdown voltage

VGS = 0, ID = – 0.25 mA

Gate threshold voltage

VGS = VDS, ID = – 1 mA

Zero gate voltage drain current

VGS = 0 V, VDS = – 50 V

Tj = 25 °C

Tj = 150 °C

Gate-source leakage current

VGS = – 20 V, VDS = 0

Tj = 25 °C

Tj = 150 °C

Drain-source on-state resistance

VGS = – 10 V, ID = – 5 A

Dynamic Characteristics

Forward transconductance

VDS ≥ 2 × ID × R , DS(on)max ID = – 5 A

Input capacitance

VGS = 0, VDS = – 25 V, f = 1 MHz

Output capacitance

VGS = 0, VDS = – 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0, VDS = – 25 V, f = 1 MHz

Turn-on time ton, (ton = td(on) + tr)

VCC = – 30 V, VGS = – 10 V, ID = – 2.9 A,

RGS = 50 Ω

Turn-off time toff, (toff = td(off) + tf)

VCC = – 30 V, VGS = – 10 V, ID = – 2.9 A,

RGS = 50 Ω

V(BR)DSS

VGS(th)

I DSS

I GSS

RDS(on)

– 50

– 2.5

–

–

–

–

–

V

–

–

– 3.0 – 3.5

µA

–1

– 100

– 10

– 300

– 10

– 100 nA

–2

–4

µA

Ω

0.25

0.3

gfs

S

1.5

2.3

4.0

Ciss

pF

–

900

1200

Coss

–

350

550

Crss

–

130

230

td(on)

–

tr

–

20

30

ns

60

95

td(off)

–

tf

–

70

90

55

75

2

04.96

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