BB601M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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BB601M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB601M

Drain Current vs. Gate1 Voltage

20

VDS = 5 V

RG = 68 kΩ

16

12

8

3V 4V

4

2V

VG2S = 1 V

0

1

2

3

4

5

Gate1 Voltage V G1 (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

VDS = 5 V

RG = 33 kΩ

24 f = 1 kHz

4V

3V

18

2V

12

6

VG2S = 1 V

0

1

2

3

4

5

Gate1 Voltage V G1 (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

VDS = 5 V

RG = 47 kΩ

24 f = 1 kHz

4V

3V

18

2V

12

6

VG2S = 1 V

0

1

2

3

4

5

Gate1 Voltage V G1 (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

VDS = 5 V

RG = 68 kΩ

24 f = 1 kHz

4V

3V

18

2V

12

6

VG2S = 1 V

0

1

2

3

4

5

Gate1 Voltage V G1 (V)

6

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