2SK217 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK217 Datasheet PDF : 7 Pages
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Output Capacitance vs.
Drain to Source Voltage
200
VGS = 0
f = 1 MHz
100
50
20
10
5
2
0.1 0.2
0.5 1.0 2
5 10
Drain to Source Voltage VDS (V)
2SK217
Power Gain vs.
Drain to Source Voltage
30
20
VGS = 0
f = 100 MHz
10
0
5
10
15
Drain to Source Voltage VDS (V)
Noise Figure vs.
Drain to Source Voltage
8
6
VGS = 0
f = 100 MHz
4
2
0
4
8
12
16
Drain to Source Voltage VDS (V)
SG Output
Impedance
Power Gain and Noise Figure
Test Circuit
5.4 Shield D.U.T. 3.0
50
C1
S.G.
L1 C2
L2 4.700
50
V.V
Unit R : Ω
VDD
C : pF
C1, C2 : 0 to 30pF Variable Air
L1 : 3.5 T φ1 mm Copper Ribbon, Tin plated 10 mm Inside dia.
L2 : 4.5 T φ1 mm Copper Ribbon, Tin plated 10 mm Inside dia.
5
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