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BU4S71 Просмотр технического описания (PDF) - ROHM Semiconductor

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BU4S71
ROHM
ROHM Semiconductor ROHM
BU4S71 Datasheet PDF : 4 Pages
1 2 3 4
Standard ICs
Single OR gate
BU4S71
The BU4S71 is an ultra-compact IC with one circuit of the dual-input positive logic OR gate built into an SMP pack-
age.
Features
1) Low current dissipation.
2) Super-mini mold package designed for surface
mounting.
3) Wide range of operating power supply voltage.
4) Direct drive of 2 L-TTL inputs and 1 LS-TTL input.
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power supply voltage
VDD
VSS – 0.3 ~ VSS + 18
V
Power dissipation
Pd
170
mW
Input current
IIN
± 10
mA
Operating temperature
Topr
– 40 ~ + 85
°C
Storage temperature
Tstg
– 55 ~ + 150
°C
Input voltage
VIN
VSS – 0.3 ~ VDD + 0.3
V
Note 1: These values indicate the range limits of the voltage that can be applied to each pin without
destroying it. Operation is not guaranteed at these values.
Note 2: Reduced by 1.7mW for each increase in Ta of 1°C over 25°C.
Recommended operating conditions (Ta = 25°C, VSS = 0V)
Parameter
Symbol Min. Typ. Max.
Unit
Power supply voltage
VDD
3
16
V
Input voltage
VIN
0
VDD
V
Block diagram
VDD
Y
5
4
1
2
3
A
B
VSS
1

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