CS464YDW16 Просмотр технического описания (PDF) - Cherry semiconductor
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CS464YDW16 Datasheet PDF : 4 Pages
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Electrical Characteristics: -30¡C ² TA ² 125¡C; -30¡C < TJ < 125¡C; All Parameters after VCC Power-up > 100ms;
VBAT = 14V unless otherwise specified.
PARAMETER
s Input, Current, Delay
Positive Threshold
Hysteresis
ICC
Input Impedance
IC Process Delay
TEST CONDITIONS
VBAT = 6V
VBAT = 16V
VBAT = 6V
VBAT = 16V
VBAT = 6V
VBAT = 16V
@10µA
@0.1mA
16 Lead SO Wide
Flip Chip
MIN TYP MAX MIN TYP MAX
UNIT
56.2 66
56.2 66
56.2 66 % of VBAT
56.2 66 % of VBAT
8 20.2
8 20.2
9 20.2
9 20.2
% of VBAT
% of VBAT
1 2.75 4.5 1 2.75 4.5
mA
5 12 19 5 12 19
mA
70 170 400
k½
70 170 400
k½
15
15
µs
s Output
Output Current
Output SOA Current
Output Leakage Current
Output Clamp Voltage
Output Clamp Impedance
VBAT = 6V, 2.1V output load 40 52.5 65 40 52.5 65
mA
VBAT = 22V (Note 1)
40 52.5 65 40 52.5 65
mA
VBAT = 25V (Note 1)
0 100
0 100
µA
@ 10mA
13.7 15.35 17 13.7 15.35 17
V
@ 10mA
10 42.5 80 10 42.5 80
½
s Regulation Voltage
VS Regulation Voltage
VS Supply Rejection
VBAT = 7.8V
165 200 235 165 200 235
mV
VBAT = 6V ~ 22V (Note 1)
0
0 14 0
0 14
%
VBAT = 7.8V ~ 22V (Note 1) 0
0 13 0
0 13
%
s Stall & Protection
Stall Shutdown VS
Stall Shutdown Frequency
Stall Shutdown Time
Stall to Spark Output Delay
I/O Signal Relationship
Battery Interrupt Time
Battery Interrupt Recovery Time
High Voltage Shutdown
High Frequency Cut off
Negative Threshold
VBAT = 6V
VBAT = 14V
VBAT = 5.5V
VBAT = 6V
@ 80% Input
@ 50% Input
@ 30% Input
@ 200Hz
VBAT = 6V
VBAT = 16V
-5
0
5
-1
0
1
mV
.4
.4
Hz
1.4 1.47
1.4 1.47
Hz
19 28 37 19 28 37
ms
4.6 6.7 9.5 4.6 6.7 9.5
ms
79.0 80.5 82.0 79.0 80.0 81.0
%
49.0 50.5 52.0 49.0 50.0 51.0
%
29.0 30.5 32.0 29.0 30.0 31.0
%
25
750 25
750
ms
800
800
ms
25 28 32 25 28 31
V
1 2.5 5
1 2.5 5
kHz
28 36
28 36
30 36
30 36
% of VBAT
% of VBAT
Note 1: Voltage extremes are for testing purposes only. Part in continuous operation should conform to absolute max
table.
2
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