GS74108AJ-12I Просмотр технического описания (PDF) - Giga Semiconductor

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производитель

GS74108AJ-12I

512K x 8 4Mb Asynchronous SRAM

Giga Semiconductor 

GS74108ATP/J/X

Truth Table

CE

OE

WE

H

X

X

L

L

H

L

X

L

L

H

H

Note:

X: “H” or “L”

DQ1 to DQ8

Not Selected

Read

Write

High Z

VDD Current

ISB1, ISB2

IDD

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

Input Voltage

VIN

Output Voltage

VOUT

Allowable power dissipation

PD

Storage temperature

TSTG

–0.5 to +4.6

V

–0.5 to VDD +0.5

V

(≤ 4.6 V max.)

–0.5 to VDD +0.5

V

(≤ 4.6 V max.)

0.7

W

–55 to 150

oC

Note:

Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended

Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

Recommended Operating Conditions

Parameter

Symbol Min

Typ

Max

Unit

Supply Voltage for -8/-10/-12

VDD

3.0

Input High Voltage

VIH

2.0

Input Low Voltage

VIL

–0.3

Ambient Temperature,

Commercial Range

TAc

0

Ambient Temperature,

Industrial Range

TAI

–40

3.3

3.6

V

—

VDD +0.3

V

—

0.8

V

—

70

oC

—

85

oC

Notes:

1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.

2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.

Rev: 1.07 1/2006

3/13

© 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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