NTE162 Просмотр технического описания (PDF) - NTE Electronics

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NTE162

Silicon NPN Transistor TV Vertical Deflection

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 1)

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(sat)

IC = 2.5A, VCE = 5V

IC = 3.5A, VCE = 5V

IC = 2.5A, IB = 0.5A

IC = 2.5A, IB = 0.5A

15 – 35

10 – –

– – 0.7 V

– – 1.5 V

Current Gain–Bandwidth Product

fT

IC = 200mA, VCE = 10V, f = 1MHz

2.5 – – MHz

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

1.187 (30.16)

.215 (5.45)

.430

(10.92)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

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