NTE165 Просмотр технического описания (PDF) - NTE Electronics

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NTE165

Silicon NPN Transistor TV Horizontal Output

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Saturation Voltage VCE(sat)

Base–Emitter Saturation Voltage

VBE(sat)

Current Gain–Bandwidth Product

fT

Switching Characteristics (Inductive Load)

IC = 4.5A, IB = 2A, Note 1

IC = 4.5A, IB = 2A, Note 1

VCE = 5V, IC = 100mA, f = 5MHz

–

– 1.0 V

–

– 1.3 V

–

7

– MHz

Storage Time

Fall Time

ts

VCC = 140V, IC = 4.5A, hFE = 2.5,

tf

LC = 0.9mH, LB = 3µH

– 7.0 – µs

– 0.55 – µs

Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 1.5%.

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

1.187 (30.16)

.215 (5.45)

.430

(10.92)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

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