NTE5538 Просмотр технического описания (PDF) - NTE Electronics
Номер в каталоге
Компоненты Описание
производитель
NTE5538 Datasheet PDF : 2 Pages
| |||
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Gate Trigger Current
Gate Trigger Voltage
Gate Non–Trigger Voltage
Holding Current
Peak On–State Voltage
Forward Leakage Current
Reverse Leakage Current
Total Turn–On Time
Turn–Off Time
Critical Rate of Rise of
Off–State Voltage
IGT
VGT
VGD
IH
VTM
IDRM
IRRM
tgt
tq
dv/dt
VD = 12V, RL = 33Ω, tp ≥ 20µs
– – 80 mA
– – 1.5 V
TJ = +125°C, VD = 800V, RL = 3.3kΩ
0.2 – – V
IT = 0.5A, Gate Open
– 20 150 mA
ITM = 100A, tp = 10ms
– – 1.9 V
VDRM = 800V
– – 0.02 mA
TJ = +125°C – – 6.0 mA
VDRM = 800V
– – 0.02 mA
TJ = +125°C – – 6.0 mA
IT = 80A, VD = 800V, IG = 200mA, diG/dt = 0.2A/µs – 2 – µs
TJ = +125°C, IT = 80A, VR = 75V, VD = 536V,
diR/dt = 30A/µs, dv/dt = 20V/µs, Gate Open
– 100 – µs
TJ = +125°C, VDRM = 536V, Gate Open,
Linear Slope Up
500 – – V/µs
.600 (15.24)
.060 (1.52)
.173 (4.4)
Isol
.156
(3.96)
Dia.
K
A
G
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.215 (5.45)
NOTE: Dotted line indicates
that case may have square
corners.
Share Link: 