NTE5538 Просмотр технического описания (PDF) - NTE Electronics
Номер в каталоге
Компоненты Описание
производитель
NTE5538 Datasheet PDF : 2 Pages
| |||
NTE5538
Silicon Controlled Rectifier (SCR)
800VDRM, 50A
Description:
The NTE5538 general purpose SCR is suited for power supplies up to 400HZ on resistive or inductive
loads.
Features:
D Glass Passivated Chip
D High Stability and Reliability
D High Surge Capability
D High On–State Current
D Easy Mounting on Heatsink
D Isolated Package: Insulating Voltage 2500VRMS
Absolute Maximum Ratings:
Peak Forward Blocking Voltage (TJ = +125°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Peak Reverse Blocking Voltage (TJ = +125°C), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (TC = +70°C, Note 1), IT (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Average On–State Current (TC = +70°C, Note 1), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A
Non–Repetitive Surge Peak On–State Current (TJ initial = +25°C, Note 2), ITSM
(t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525A
(t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A
I2t Value (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1250A2sec
Critical Rate of Rise of On–State Current (Note 3), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Storage and Operating Junction Temperature Range, Tstg, TJ . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance
Junction–to–Case for DC, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Contact (Case–to–Heatsink), RthCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2°C/W
Note 1. Single phase circuit, 180° conducting angle.
Note 2. Half sine wave.
Note 3. IG = 800mA, diG/dt = 1A/µs.
Gate Characteristics: (Maximum Values)
Peak Gate Power (t = 10µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Average Gate Power Dissipation, PG (AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Peak Forward Gate Current (t = 10µs), IFGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Forward Gate Voltage (t = 10µs), VFGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Share Link: 