AS17xx
Semicustom Bipolar Array
Electrical Characteristics (cont’d)
All parameters measured at 25° C.
Parameter
AS1700-PNP: Lateral PNP
Collector-to-Emitter Breakdown Voltage
Field-Effect Threshold Voltage
P + to Substrate Leakage
Collector Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Voltage
Static Forward Current-Transfer Ratio
Early Voltage
Transistor Matching (measuring ∆ IE)
Double Collector Matching (meas. ∆ IE)
AS1700-PWR: Vertical PNP
Collector-to-Emitter Breakdown Voltage
Collector Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Voltage
Static Forward Current-Transfer Ratio
Symbol
LVCEO
VTF
ISUB
ICEO
VCE SAT
VEB
β (hFE)
VA
LVCEO
ICEO
VCE SAT
VEB
β (hFE)
Test Condition
IE = 100 µA
IE = 10 µA
IE = 100 µA, VB = 1 V
VCE = 18 V
IB = 10 µA, IE = 100 µA
VEC = 3 V, IE = 100 µA
VEC = 3 V, IE = 100 µA
IE = 200 µA
IE = 200 µA
IE = 100 µA
VCE = 18 V
IB = 10 µA, IE = 100 µA
VEC = 3 V, IE = 100 µA
VEC = 3 V, IE = 100 µA
Min
Typ
Max
Unit
30
50
V
36
V
0
150
500
nA
0
2
100
nA
0
150
200
mV
630
690
700
mV
20
60
300
–105
V
–10
<1
10
%
–10
<1
10
%
30
50
V
0
2
100
nA
0
150
200
mV
650
680
700
mV
20
125
500
ASTEC Semiconductor
122