HM5212325FBP-B60 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM5212325FBP-B60

128M LVTTL interface SDRAM 100 MHz 1-Mword ×32-bit ×4-bank PC/100 SDRAM

Hitachi -> Renesas Electronics 

HM5212325FBPC-B60

Notes: 1. AC measurement assumes tT = 1 ns. Reference level for timing of input signals is 1.5 V.

2. Access time is measured at 1.5 V. Load condition is CL = 50 pF.

3. tLZ (min) defines the time at which the outputs achieves the low impedance state.

4. tHZ (max) defines the time at which the outputs achieves the high impedance state.

5. tCES define CKE setup time to CLK rising edge except power down exit command.

6. tAS/tAH: Address, tCS/tCH: CS, RAS, CAS, WE, DQM.

tDS/tDH: Data-in, tCES/tCEH: CKE

Test Conditions

• Input and output timing reference levels: 1.5 V

• Input waveform and output load: See following figures

input

2.4 V

2.0 V

0.4 V 0.8 V

tT

tT

I/O

CL

10

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