HN29W12811T-60 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN29W12811T-60

128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

Hitachi -> Renesas Electronics 

HN29W12811 Series

Absolute Maximum Ratings

Parameter

Symbol

Value

VCC voltage

VSS voltage

All input and output voltages

Operating temperature range

VCC

VSS

Vin, Vout

Topr

–0.6 to +4.6

0

–0.6 to VCC + 0.3

0 to +70

Storage temperature range

Tstg

–65 to +125

Storage temperature under bias

Tbias

–10 to +80

Notes: 1. Relative to VSS.

2. Vin, Vout = –2.0 V for pulse width ≤ 20 ns.

3. Device storage temperature range before programming.

Unit

V

V

V

˚C

˚C

˚C

Notes

1

1, 2

3

Capacitance (Ta = 25˚C, f = 1 MHz)

Parameter

Input capacitance

Output capacitance

Symbol

Cin

Cout

Min Typ Max Unit Test conditions

— — 6 pF Vin = 0 V

— — 12 pF Vout = 0 V

17

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