CY7C1350-80AC Просмотр технического описания (PDF) - Cypress Semiconductor
Номер в каталоге
Компоненты Описание
производитель
CY7C1350-80AC Datasheet PDF : 13 Pages
| |||
PRELIMINARY
CY7C1350
Pin Definitions
Pin Number
50 −44,
81−82, 99,
100, 32−37
96−93
Name
A[16:0]
BWS[3:0]
88
WE
85
ADV/LD
89
CLK
98
CE1
97
CE2
92
CE3
86
OE
87
CEN
29−28,
25−22,
19−18,13−12,
9-6, 3-2, 79−
78, 75−72,
69− 68, 63−62
59−56, 53−52
DQ[31:0]
30, 1, 80 51 DP[3:0]
I/O
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-Clock
Input-
Synchronous
Input-
Synchronous
Input-
Synchronous
Input-
Asynchronous
Input-
Synchronous
I/O-
Synchronous
I/O-
Synchronous
Description
Address Inputs used to select one of the 131,072 address locations. Sampled at
the rising edge of the CLK.
Byte Write Select Inputs, active LOW. Qualified with WE to conduct writes to the
SRAM. Sampled on the rising edge of CLK. BWS0 controls DQ[7:0] and DP0, BWS1
controls DQ[15:8] and DP1, BWS2 controls DQ[23:16] and DP2, BWS0 controls
DQ[31:24] and DP3. See Write Cycle description table for details.
Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active
LOW. This signal must be asserted LOW to initiate a write sequence.
Advance/Load input used to advance the on-chip address counter or load a new
address. When HIGH (and CEN is asserted LOW) the internal burst counter is
advanced. When LOW, a new address can be loaded into the device for an access.
After being deselected, ADV/LD should be driven LOW in order to load a new
address.
Clock input. Used to capture all synchronous inputs to the device. CLK is qualified
with CEN. CLK is only recognized if CEN is active LOW.
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE2, and CE3 to select/deselect the device.
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in
conjunction with CE1,and CE3 to select/deselect the device.
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE2 to select/deselect the device.
Output Enable, active LOW. Combined with the synchronous logic block inside the
device to control the direction of the I/O pins. When LOW, the I/O pins are allowed
to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act
as input data pins. OE is masked during the data portion of a write sequence,
during the first clock when emerging from a deselected state, when the device has
been deselected.
Clock Enable Input, active LOW. When asserted LOW the clock signal is recog-
nized by the SRAM. When deasserted HIGH the Clock signal is masked. Since
deasserting CEN does not deselect the device, CEN can be used to extend the
previous cycle when required.
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that
is triggered by the rising edge of CLK. As outputs, they deliver the data contained
in the memory location specified by A[16:0] during the previous clock rise of the
read cycle. The direction of the pins is controlled by OE and the internal control
logic. When OE is asserted LOW, the pins can behave as outputs. When HIGH,
DQ[31:0] are placed in a three-state condition. The outputs are automatically
three-stated during the data portion of a write sequence, during the first clock when
emerging from a deselected state, and when the device is deselected, regardless
of the state of OE.
Bidirectional Data Parity I/O lines. Functionally, these signals are identical to
DQ[31:0]. During write sequences, DP0 is controlled by BWS0, DP1 is controlled by
BWS1, DP2 is controlled by BWS2, and DP3 is controlled by BWS3.
3
Share Link: 