BDY58 Просмотр технического описания (PDF) - Comset Semiconductors
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BDY58 Datasheet PDF : 3 Pages
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NPN BDY57 – BDY58
SILICON TRANSISTORS, DIFFUSED MESA
The BDY57 and BDY58 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
IB
PTOT
TJ TS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
@ TC = 25°
Junction Temperature Storage Temperature
Value
BDY57
BDY58
BDY57
BDY58
80
125
120
160
10
25
6
175
-65 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
09/11/2012
COMSET SEMICONDUCTORS
1|3
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