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PJD1616ACT

NPN Epitaxial Silicon Transistor

Promax Johnton 

PJD1616A

NPN Epitaxial Silicon Transistor

AUDIO FREQ UENCY PO WER AMPLIFIER

MEDIUM SPEED SWIT CHING

TO-92

SOT-23

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

Rating

Symbol Rating Unit

Collector-base Voltage

Collector-Emitter Voltage

Emitter-base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

VCBO

VCEO

VEBO

IC

IC

PD

TJ

T stg

120

V

60

V

6

V

1

A

2

A

0.75

W

150

℃

-55~150 ℃

• PW ≤ 10ms, Duty Cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Pin :

1.Emitter

2.Colletor

3.Base

Pin :

1.Base

2.Emitter

3.Colletor

ORDERING INFORMATION

Device

PJD1616ACT

PJD1616ACX

Operating Temperature

-20℃～+85℃

Package

T O-92

SOT -23

Characteristic

Symbol

Test Condition

Min

Typ

Max Unit

Collector Cutoff Current

ICBO

VCB=60V,IE=0

100

nA

Emitter Cutoff Current

IEBO

VEB=6V,IC=0

100

nA

*DC Current Gain

hFE1

VCE=2V,IC=100mA

135

400

hFE2

VCE=2V,IC=1A

81

**Base Emitter On Voltage

VBE (on) VCE=2V,IC=50mA

600

640

700

mV

*Collector Emitter Saturation Voltage

VCE (sat) IC=1A,IB=50mA

0.15

0.3

V

*Base Emitter Saturation Voltage

VBE (sat) IC=1A,IB=50mA

0.9

1.2

V

Output Capacitance

COb

VCB=10V,IE=0,f=1MHz

19

pF

Current Gain Bandwidth Product

fT

VCE=2V,IC=100mA

100

160

MHz

Turn On Time

ton

VCC=10V,IC=100mA

0.07

μs

Storage Time

ts

IB1= -IB2=10mA

0.95

μs

Fall Time

tf

VBE(off)= -2~-3V

0.07

μs

• Pulse Test:PW ≤ 350μs, Duty Cycle ≤ 2% Polsed

hFE(1) CLASSIFICATION

Classification

hFE(1)

Y

135-270

G

200-400

L

300-600

1-4

2002/01.rev.A

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