BD649 Просмотр технического описания (PDF) - Comset Semiconductors

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BD649

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

BD644/646/648/650/652

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

-ICBO

-ICEO

-IEBO

-VCE(SAT)

-VBE(SAT)

Collector Cutoff Current

-IE=0,-VCB =-VCEOMAX

-IE=0,-VCB =1/2 -VCBOMAX,

TJ=150°C

Collector Cutoff Current

-IE=0, -VCE =1/2 -VCEOMAX

Emitter Cutoff Current

-VEB=5 V, -IC=0

-IC=4 A, -IB=16 mA

Collector-Emitter saturation

Voltage (*)

-IC=3 A, -IB=12 mA

-IC=5 A, -IB=50 mA

Base-Emitter Saturation

Voltage (*)

-IC=12 A, -IB=50 mA

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

- - 0.1 mA

- - 1 mA

- - 0.2 mA

- - 5.0 mA

- -2

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- -2

- -2 V

- -2

- -2

- - 2.5

- - 2.5

- - 2.5

- - 2.5

- - 2.5

-

-3

V

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