BD648(2012) Просмотр технического описания (PDF) - Comset Semiconductors

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BD648
(Rev.:2012)

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

BD644 – 646 – 648 – 650 – 652

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

-IB

Base Current

PT

Power Dissipation

@ Tmb < 25°

TJ

Junction Temperature

Ts

Storage Temperature range

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

150

62.5

150

-65 to +150

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Unit

mA

Watts

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-MB

RthJ-A

From junction to mounting base

From junction to ambient in free air

Value

2

70

Unit

K/W

K/W

18/10/2012

COMSET SEMICONDUCTORS

2|5

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