BDX66 Просмотр технического описания (PDF) - Comset Semiconductors
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BDX66 Datasheet PDF : 4 Pages
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BDX 66, A, B, C
Symbol
Ratings
IEBO
Emitter Cutoff Current
Test Condition(s)
Min Typ Mx Unit
VBE=-5 V
BDX66
BDX66A
BDX66B
-
BDX66C
- -5.0 mA
TCASE=25°C, VCB=-40 V
TCASE=150°C
- - -1
BDX66
- - -5
ICBO
Collector-Base Cutoff
Current
TCASE=25°C, VCB=-50 V
TCASE=150°C
TCASE=25°C, VCB=-60 V
TCASE=150°C
-
BDX66A
-
-
BDX66B
-
- -1
- -5
mA
- -1
- -5
VCE(SAT)
C22b
ton
toff
TCASE=25°C, VCB=-70 V
TCASE=150°C
-
BDX66C
-
- -1
- -5
Collector-Emitter saturation
Voltage (*)
IC=-10 A, IB=-40 mA
BDX66
BDX66A
BDX66B
-
- -2
V
BDX66C
BDX66
IE=0 A, VCB=-10V, f=1 MHz
BDX66A
BDX66B
-
300
-
pF
BDX66C
BDX66
-1-
Switching characteristics
VCC=12V, IC=-10 A, IB1=-
IB2=0.04
BDX66A
BDX66B
µs
BDX66C - 3.5 -
COMSET SEMICONDUCTORS
3/4
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