GLT6400M16(2001) Просмотр технического описания (PDF) - G-Link Technology
Номер в каталоге
Компоненты Описание
Список матч
GLT6400M16 Datasheet PDF : 13 Pages
| |||
G-LINK
GLT6400M16
Ultra Low Power 256k x 16 CMOS SRAM
May 2001(Rev. 1.1)
DC Operating Characteristics ( Vcc=2.3 to 2.7V, TA = -25°C to 85°C )
Parameter
Sym.
Test Conditions
120
Min
Max
Input Leakage Current
ILI VCC = Max,
Vin = Gnd to VCC
-
1
Output Leakage
Current
ILO CE1 =VIH or CE2 = VIH
-
1
VCC = Max, VOUT = Gnd to VCC
Operating Power
Supply Current
ICC
CE1 =VIL ,CE2 = VIH
VIN=VIH or VIL, IOUT=0mA
-
5
Average Operating
Current
ICC1
CE1 =VIL ,CE2 = VIH
IOUT = 0mA,
Min Cycle, 100% Duty
-
30
ICC2 CE1 =0.2V
CE2 = VCC – 0.2V
IOUT = 0mA,
Cycle Time=1µs, 100% Duty
-
5
Standby Power Supply
Current(TTL Level)
ISB
CE1 =VIH or CE2 = VIL
-
0.3
Standby Power Supply
Current (CMOS Level)
ISB1
CE1 ≥ VCC-
GLT6400M16LL
-
20
0.2V or
CE2 ≤ 0.2V, f=0
-
VIN ≤ 0.2V or GLT6400M16SL
5
VIN ≥ VCC-0.2V
Output Low Voltage
VOL IOL = 0.5 mA
-
0.4
Output High Voltage
VOH IOH = -0.5 mA
2.0
-
Unit
µA
µA
mA
mA
mA
mA
µA
µA
V
V
Data Retention
Parameter
VCC for Data retention
Data Retention Current
Chip Deselect to Data Retention Time
Operating Recovery Time(2)
Sym.
VDR
ICCDR
tCDR
tR
Test Conditions
CE1 ≥ VCC -0.2V
CE2 ≤ +0.2V
VIN ≥ VCC -0.2V or
VIN ≤ 0.2V
Min.
1.0
-
0
tRC
Max.
-
4
-
-
Unit
V
µA
ns
ns
Data Retention Waveform (TA = -25°C to +85°C)
Vcc
Vcc-typ
tCDR
Data Retention Mode
VDR >= 1.0V
Vcc-typ
tR
CE1
VIH
VDR
VIH
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-4-
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
Share Link: 