HSM126S Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HSM126S

Silicon Schottky Barrier Diode for System Protection

Hitachi -> Renesas Electronics 

HSM126S

Absolute Maximum Ratings (Ta = 25°C)*3

Item

Repetitive peak reverse voltage

Average forward current

Non-Repetitive peak forward surge current

Junction temperature

Storage temperature

Notes: 1. Sine wave, Two device total

2. 50Hz half sine wave 1 pulse

3. Per one device

Symbol

VRRM

IO*1

I FSM * 2

Tj

Tstg

Value

Unit

20

V

200

mA

2

A

125

°C

–55 to +125

°C

Electrical Characteristics (Ta = 25°C)*

Item

Symbol Min Typ Max Unit Test Condition

Reverse current

IR

Forward voltage

VF

Capacitance

C

Note: Per one device

—

—

2.0

µA

VR = 5V

—

—

0.35 V

IF = 10mA

—

40

—

pF

VR = 0V, f = 1MHz

10

Pulse test

1.0

10–1

Ta = 75°C

10–2

Ta = 25°C

10–3

10–4

10–5

0

0.2 0.4 0.6 0.8 1.0

Forward voltage VF (V)

Fig.1 Forward current Vs. Forward voltage

2

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