5962F9764001VXC Просмотр технического описания (PDF) - Intersil

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5962F9764001VXC

Radiation Hardened 8-Input Multiplexer

Intersil 

ACS151MS

Die Characteristics

DIE DIMENSIONS:

Size: 2390µm x 2390µm (94mils x 94mils)

Thickness: 525µm ±25µm (20.6mils ±1mil)

Bond Pad: 110µm x 110µm (4.3mils x 4.3 mils)

METALLIZATION:

Type: Al

Metal 1 Thickness: 0.7µm ±0.1µm

Metal 2 Thickness: 1.0µm ±0.1µm

SUBSTRATE:

Silicon on Sapphire (SOS)

SUBSTRATE POTENTIAL:

Metallization Mask Layout

I2

Unbiased Insulator

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Type: Phosphorous Silicon Glass (PSG)

Thickness: 1.30µm ±0.15µm

SPECIAL INSTRUCTIONS

Bond VCC First

ADDITIONAL INFORMATION:

Worst Case Density: <2.0 x 105 A/cm2

Transistor Count: 166

ACS151MS

I3

VCC

I4

I1

I5

I0

I6

Y

I7

Y

S0

E

GND

S2

S1

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate

and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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