HI-DAC85V Просмотр технического описания (PDF) - Intersil

Номер в каталоге

Компоненты Описание

Список матч

HI-DAC85V

12-Bit, Low Cost, Monolithic D/A Converters

Intersil 

Die Characteristics

DIE DIMENSIONS:

108 mils x 163 mils

METALLIZATION:

Type: Al

Thickness: 16kÅ ±2kÅ

TIE SUBSTRATE TO:

Ground

HI-DAC80V, HI-DAC85V

PASSIVATION:

Type: Nitride over Silox

Nitride Thickness: 3.5kÅ ±0.5kÅ

Silox Thickness: 12kÅ ±1.5kÅ

WORST CASE CURRENT DENSITY:

0.95 x 105 A/cm2

Metallization Mask Layout

BIT 3

HI-DAC80V, HI-DAC85V

BIT 1

BIT 2 (MSB)

6.3V

REF OUT

GAIN ADJUST

+VS

BIT 4

COMMON

SUMMING JUNCTION

BIT 5

20V

SPAN

BIT 6

BIT 7

10V

SPAN

BIT 8

BIT 9

BIPOLAR

OFFSET

REF IN

BIT 10

BIT 11

BIT 12

-VS

VOUT

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate

and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

10-1040

Share Link: