STPS4045CW Просмотр технического описания (PDF) - STMicroelectronics
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STPS4045CW Datasheet PDF : 5 Pages
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STPS4045CP/CW
Fig. 3: Nonrepetitivesurgepeakforwardcurrentversus Fig. 4: Relative variation of thermal transient
overloadduration(maximum values)(per diode).
impedancejunction to case versus pulse duration.
IM(A)
200
180
160
140
120
100
80
60
40 IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2
δ = 0.2
δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 5: Reverse leakage current versus reverse Fig. 6: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
voltage applied (typical values) (per diode).
IR(µA)
5E+4
1E+4
1E+3
1E+2
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
1E+1
1E+0
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40 45
C(nF)
5.0
1.0
0.1
1
2
VR(V)
5
10
20
50
Fig. 7: Forward voltage drop versus forward
current (maximum values) (per diode).
IFM(A)
200
100
10
Typical values
Tj=125°C
Tj=25°C
Tj=125°C
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
3/5
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