PF08103B Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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PF08103B

MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

Hitachi -> Renesas Electronics 

PF08103B

Absolute Maximum Ratings (Tc = 25°C)

Item

Symbol

Rating

Unit

Supply voltage

VDD

8.5

V

Supply current

IDD GSM

3.5

A

IDD DCS

2

A

VCTL , VCTL voltage

VCTL, VCTL

4

V

Vapc voltage

Vapc

4

V

Input power

Pin

10

dBm

Operating case temperature

Tc (op)

−30 to +100

°C

Storage temperature

Tstg

−30 to +100

°C

Output power

Pout GSM

5

W

Pout DCS

3

W

Note: The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band

(1710-1785 MHz).

Electrical Characteristics for DC (Tc = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Condition

Drain cutoff current Ids





20

µA

VDD = 4.7 V, Vapc = 0 V,

VCTL = 0 V, VCTL = 0 V





300

µA

VDD = 4.7 V, Vapc = 0 V,

VCTL = 0 V, VCTL = 0 V,

Tc = −20 to +80°C

Vapc control current Iapc





3

mA

Vapc = 2.2 V

VCTL control current ICTL





2

VCTL control current ICTL





1

µA

VCTL = 3 V

µA

VCTL = 3 V

3

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