RF110 Просмотр технического описания (PDF) - Conexant Systems
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RF110 Datasheet PDF : 6 Pages
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RF110
2400 MHz Power Amplifier
Technical Description
The RF110 is a three stage, class AB RF power amplifier. A
class AB power amplifier allows a wide range of output powers
without excessive idle power dissipation.
Figure 3 shows a typical application circuit for the RF110.
Recommendations on Layout and Implementation _______
Matching. An input matching network and an output matching
network are required for maximum power gain.
The output matching network must provide the optimum load
resistance to the RF110 outputs as well as convert the
differential signals to a single-ended signal into a 50 Ω load.
The output matching network should present a differential
impedance of approximately 59-j10 Ω to the output of the
RF110, with a 180° phase difference between the two branches.
The values of the matching network components depend on
layout, Printed Wire Board (PWB) material and dimensions.
Bypassing. All VCC pins should have proper bypassing. The
decoupling capacitors should be placed very close to the pins.
A bypass capacitor of 8.2 pF and a decoupling capacitor of 1 nF
are recommended. Due to layout variations, the optimum value
of the capacitor may vary.
General Grounding Requirements. All ground pins should
have minimum trace inductance to ground. If a ground plane
cannot be provided right at the pins, the vias to ground plane
should be placed as close to the pins as possible. There should
be one via for each ground pin, unless otherwise specified. If the
ground plane is at the bottom layer, two vias per pin in parallel
may be required.
Pins 14-15 and 16-17 are recommended to be isolated from the
top layer ground.
Pins 2, 9, 12, and 19 are recommended to be tied together on
the top layer isolated from the top layer ground.
NC pins are not used in the circuit and should be connected to
ground as shown in Figure 3.
ESD Sensitivity______________________________________
The RF110 is a static-sensitive electronic device. Do not operate
or store near strong electrostatic fields. Take proper
Electrostatic Discharge (ESD) precautions.
52° *
79 Ω
OPEN
SHUNT
29° *
84 Ω
52.6° *
97 Ω
4° *
84 Ω
1.2 pF
40° *
84 Ω
8.2 pF
90° *
84 Ω
8.2 pF
10 nH
1000 pF10 nH
1000 pF
0.1 µF
VBAT
+47 µF
5.3 V
1000 pF
VBAT
TxEnable
10 nH
10 Ω
10 Ω
8.2 pF
1
RFOUT1
2
GND1
8.2 pF
3
VCC1
4
NC1
5
NC2
8.2 pF
6
VCC2
7
ENABLE
8
VCC3
9
GND2
10
RFIN1
RF110
20
RFOUT2
19
GND10
18
GND9
17
GND8
16
GND7
15
GND6
14
GND5
13
GND4
12
GND3
11
RFIN2
Matching
network
RFOUT LPF
T/R
switch
Antenna
matching
OUT OUT
RF109
Figure 3. RF110 Typical Application Circuit
* Center frequency = 2442 MHz
2
Conexant
100647A
Conexant Proprietary
1/19/00
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