PZTA64T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
V(BR)CES
30
—
Collector-Base Breakdown Voltage
(IC = 100 µA, IE = 0)
V(BR)CBO
30
—
Emitter-Base Breakdown Voltage
(IE = 100 µA, IC = 0)
V(BR)EBO
10
—
Emitter-Base Cutoff Current
(VBE = 10 Vdc, IC = 0)
IEBO
—
0.1
Collector-Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS(2)
ICBO
—
0.1
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
10,000
—
20,000
—
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
—
1.5
Base-Emitter On-Voltage
(VCE = 5.0 Vdc, IC = 100 mAdc)
VBE(on)
—
2.0
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
fT
125
—
Unit
Vdc
Vdc
Vdc
µAdc
µAdc
—
Vdc
Vdc
MHz
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data