TIP32ATU(2014) Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание

производитель

TIP32ATU
(Rev.:2014)

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Thermal Characteristics

Values are at TC = 25°C unless otherwise noted.

Symbol

PC

Parameter

Collector Dissipation (TA = 25°C)

Collector Dissipation (TC = 25°C)

Value

2

40

Unit

W

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Symbol

Parameter

VCEO(sus)

Collector-Emitter Sustaining

Voltage(1)

TIP32

TIP32A

TIP32C

ICEO

Collector Cut-Off Current

TIP32 /

TIP32A

TIP32C

TIP32

ICES Collector Cut-Off Current TIP32A

TIP32C

IEBO Emitter Cut-Off Current

hFE

DC Current Gain(1)

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage(1)

Base-Emitter On Voltage(1)

fT

Current Gain Bandwidth Product

Conditions

IC = -30 mA, IB = 0

VCE = -30 V, IB = 0

VCE = -60 V, IB = 0

VCE = -40 V, VEB = 0

VCE = -60 V, VEB = 0

VCE = -100 V, VEB = 0

VEB = -5 V, IC = 0

VCE = -4 V, IC = -1 A

VCE = -4 V, IC =- 3 A

IC = -3 A, IB = -375 mA

VCE = -4 V, IC = -3 A

VCE = -10 V, IC = -500 mA,

f = 1 MHz

Note:

1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.

Min.

-40

-60

-100

25

10

3.0

Max.

-0.3

-0.3

-200

-200

-200

-1

50

-1.2

-1.8

Unit

V

mA

μA

mA

V

V

MHz

© 2000 Fairchild Semiconductor Corporation

TIP32 / TIP32A / TIP32C Rev. 1.1.0

2

www.fairchildsemi.com

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