A1434 Просмотр технического описания (PDF) - SANYO -> Panasonic
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A1434 Datasheet PDF : 3 Pages
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Ordering number:EN1853A
PNP Epitaxial Planar Silicon Transistor
2SA1434
High hFE, Low-Frequency
General-Purpose Amp Applications
Applications
· Low frequency general-purpose amplifiers, drivers,
muting circuits.
Features
· Very small-sized package permitting 2SA1434-used
sets to be made smaller, slimer.
· Adoption of FBET process.
· High DC current gain (hFE=500 to 1200).
· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
· High VEBO (VEBO≥15V).
Package Dimensions
unit:mm
2018A
[2SA1434]
1 : Emitter
2 : Collector
3 : Base
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Marking : FL
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=–40V, IE=0
VEB=–10V, IC=0
VCE=–5V, IC=–10mA
VCE=–10V, IC=–10mA
VCB=–10V, f=1MHz
IC=–50mA, IB=–1mA
IC=–10µA, IB=–1mA
IC=–10µA, IE=0
IC=–1mA, RBE=∞
IE=–10µA, IC=0
SANYO : CP
Ratings
Unit
–60 V
–50 V
–15 V
–100 mA
–200 mA
200 mW
125 ˚C
–55 to +125 ˚C
Ratings
min typ
500 800
100
4.8
–0.2
–0.8
–60
–50
–15
max
–0.1
–0.1
1200
–0.5
–1.1
Unit
µA
µA
MHz
pF
V
V
V
V
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3277KI/N135KI, TS No.1853-1/3
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