D1213 Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

Список матч

D1213

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Parameter

Gain-Bandwidth Product

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

Switching Time Test Circuit

2SB904/2SD1213

Symbol

Conditions

fT

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

VCE=(–)5V, IC=(–)1A

IC=(–)1mA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)1mA, IC=0

See specified Test Circuit

See specified Test Circuit

tf

See specified Test Circuit

Ratings

min typ max

120

(–)60

(–)30

(–)6

300

(300)

600

20

Unit

MHz

V

V

V

ns

ns

ns

ns

No.1022–2/4

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