FC117 Просмотр технического описания (PDF) - SANYO -> Panasonic

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FC117

Low-Frequency General-Purpose Amp Applications

SANYO -> Panasonic 

Ordering number:EN3115

FC117

PNP Epitaxial Planar Silicon Composite Transistor

Low-Frequency

General-Purpose Amp Applications

Features

· Composite type with 2 transistors contained in the

CP package currently in use, improving the mount-

ing efficiency greatly.

· The FC117 is formed with two chips, being equiva-

lent to the 2SA1753, placed in one package.

· Low collector to emitter saturation voltage.

· Excellent in thermal equilibrium and pair capability.

Package Dimensions

unit:mm

2067

[FC117]

Electrical Connection

E1:Emitter1

B1:Base1

C2:Collerctor2

E2:Emitter2

B2:Base2

C1:Collector1

Specifications

SANYO:CP6

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

PC

PT

Tj

Tstg

Electrical Characteristics at Ta = 25˚C

1 unit

Conditions

Ratings

Unit

–20 V

–15 V

–5 V

–500 mA

–1 A

–100 mA

200 mW

300 mW

150 ˚C

–55 to+150 ˚C

Parameter

Symbol

Conditions

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

DC Current Gain Ratio

ICBO

IEBO

hFE(1)

hFE(2)

hFE(small/

large)

VCB=–15V, IE=0

VEB=–4V, IC=0

VCE=–2V, IC=–10mA

VCE=–2V, IC=–400mA

VCE=–2V, IC=–10mA

Gain-Bandwidth Product

Output Capacitance

C-E Saturation Voltage

B-E Saturation Voltage

C-B Breakdown Voltage

C-E Breakdown Voltage

E-B Breakdown Voltage

fT

Cob

VCE(sat)1

VCE(sat)2

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

VCE=–2V, IC=–50mA

VCE=–10V, f=1MHz

IC=–5mA. IB=–0.5mA

IC=–200mA. IB=–10mA

IC=–200mA. IB=–10mA

IC=–10µA, IE=0

IC=–1mA, RBE=∞

IE=–10µA, IC=0

Note: The specifications shown above are for each individual transistor.

Ratings

Unit

min

typ max

–0.1 µA

–0.1 µA

160

560

70

0.8 0.98

400

6.5

–15

–200

–0.95

–20

–15

–5

–35

–360

–1.2

MHz

pF

mV

mV

V

V

V

V

Marking:117

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/5129MO, TS No.3115-1/3

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