BD678A Просмотр технического описания (PDF) - Comset Semiconductors

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BD678A

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

PNP BD676/A - BD678/A - BD680/A - BD682/A

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

IE=0 , -VCB= - 45 V

BD676/A -

- 0,2

IE=0 , -VCB= - 60 V

BD678/A -

- 0,2

IE=0 , -VCB= - 80 V

BD680/A -

- 0,2

-ICBO

Collector cut-off

current

IE=0 , -VCB= - 100 V

BD682/A

IE=0 , -VCB= - 45V, Tj= 150°C BD676/A

IE=0 , -VCB= - 60V, Tj= 150°C BD678/A

-

-

-

- 0,2

-

2 mA

-

2

IE=0 , -VCB= - 80V, Tj= 150°C BD680/A -

-

2

IE=0 , -VCB= - 100V

Tj= 150°C

BD682/A -

-

2

BD676/A -

- 0,5

-ICEO

Collector cut-off

current

IB=0 , -VCE= -½VCEOMAX

BD678/A -

BD680/A -

-

-

0,5

0,5

mA

BD682/A -

- 0,5

-IEBO

Emitter cut-

offcurrent

IC=0, -VEB=5 V

-

-

5 mA

Collector-Emitter

-VCEO(SUS) sustaning

IB=0 , -IC=50 mA

Voltage

BD676/A 45 V

-

BD678/A 60

BD680/A 80

-

-

V

BD682/A 100

-

-VCE(SAT)

Collector-Emitter

saturation

Voltage

BD676, BD678, BD680, BD682

-IC=1.5 A, -IB=30 mA

BD676A, BD678A, BD680A, BD682A

-IC=2 A, -IB=40 mA

-

- 2,5

V

-

- 2.8

BD676, BD678, BD680, BD682

-VCE=3 V, -IC=500 mA

- 2200 -

BD676, BD678, BD680, BD682

hFE

DC Current Gain

-VCE=3 V, -IC=1,5 A

BD676, BD678, BD680, BD682

-VCE=3 V, -IC=4 A

750 -

-

- 650 -

BD676A, BD678A, BD680A, BD682A

-VCE=3 V, -IC=2 A

750 -

-

-VBE

Base-Emitter

Voltage(1&2)

BD676, BD678, BD680, BD682

-VCE=3 V, -IC=1,5 A

BD676A, BD678A, BD680A, BD682A

-VCE=3 V, -IC=2 A

-

- 2,5

V

-

- 2.5

hfe

Small signal

current gain

-VCE=3 V, -IC=1,5 A, f= 1 MHz

10 -

-

fhfe

Ut-off frequency -VCE=3 V, -IC=1,5 A

VF

Diode forward

voltage

IF=1,5 A

- 60 - kHz

- 1,5 -

V

-I(SB)

Second-

breakdown

collector current

-VCE=50 V, tP= 20ms,non rep., without

heatsink

0,8

-

-

A

COMSET SEMICONDUCTORS

2

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