CHR2291 Просмотр технического описания (PDF) - United Monolithic Semiconductors
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CHR2291 Datasheet PDF : 6 Pages
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CHR2291
12-17GHz Integrated Down Converter
GaAs Monolithic Microwave IC
Description
LO
The CHR2291 is a multifunction chip which
integrates a LO time two multiplier, a balanced
cold FET mixer, and a RF LNA. It is designed for
Q
a wide range of applications, typically commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
GM
GB
I
The circuit is manufactured with a PM-HEMT VDM
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
VDL
GX
VGA
RF
Main Features
• Broadband performances : 12-17GHz
• 10 dB conversion gain
• 3.5dB noise figure
• 10dBm LO input power
• -8dBm RF input power (1dB gain comp.)
• Low DC power consumption, 130mA@3.5V
• Chip size : 2.49 X 2.13 X 0.10 mm
Main Characteristics
Tamb. = 25°C
Parameter
Typical on wafer measurement:
Conversion Gain & Image suppression @ IF=1& 1.5GHz
14
12
10
8
2LO Frequency
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
11,0
12,0
13,0
14,0
15,0
16,0
17,0
18,0
RF Frequency (GHz)
Min Typ Max Unit
FRF
RF frequency range
12
17
FLO
LO frequency range
5.25
7.75
FIF
IF frequency range
0.25
1.5
Gc
Conversion gain
+10
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
GHz
GHz
GHz
dB
Ref. : DSCHR22912218 06-Aug.-02
1/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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