2N5460_D74Z Просмотр технического описания (PDF) - Fairchild Semiconductor

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2N5460_D74Z

P-Channel General Purpose Amplifier

Fairchild Semiconductor 

P-Channel General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

OFF CHARACTERISTICS

V(BR)GSS

IGSS

Gate-Source Breakdown Voltage

Gate Reverse Current

VGS(off)

Gate-Source Cutoff Voltage

VGS

Gate-Source Voltage

IG = 10 µA, VDS = 0

VGS = 20 V, VDS = 0

VGS = 20 V, VDS = 0, TA = 100°C

VDS = 15 V, ID = 1.0 µA 5460

5461

5462

VDS = 15 V, ID = 0.1 mA

VDS = 15 V, ID = 0.2 mA

VDS = 15 V, ID = 0.4 mA

5460

5461

5462

40

0.75

1.0

1.8

0.5

0.8

1.5

ON CHARACTERISTICS

IDSS

Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0

5460

5461

5462

- 1.0

- 2.0

- 4.0

V

5.0 nA

1.0 µA

6.0

V

7.5

V

9.0

V

4.0

V

4.5

V

6.0

V

- 5.0 mA

- 9.0 mA

- 16 mA

SMALL SIGNAL CHARACTERISTICS

gfs

Forward Transfer Conductance

VDS = 15 V, VGS = 0, f = 1.0 kHz

5460 1000

4000 µmhos

5461 1500

5000 µmhos

5462 2000

6000 µmhos

gos

Output Conductance

VDS = 15 V, VGS = 0, f = 1.0 kHz

75 µmhos

Ciss

Input Capacitance

VDS = 15 V, VGS = 0, f = 1.0 MHz

5.0 7.0 pF

Crss

Reverse Transfer Capacitance

VDS = 15 V, VGS = 0, f = 1.0 MHz

1.0 2.0 pF

NF

Noise Figure

VDS = 15 V, VGS = 0,

RG = 1.0 megohm, f = 100 Hz,

BW = 1.0 Hz

en

Equivalent Short-Circuit Input

VDS = 15 V, VGS = 0, f = 100 Hz,

Noise Voltage

BW = 1.0 Hz

1.0 2.5 dB

60

115 nV/√Hz

5

*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%

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