NTE2381 Просмотр технического описания (PDF) - NTE Electronics

Номер в каталоге

Компоненты Описание

Список матч

NTE2381

Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

Drain–Source Breakdown Voltage

Zero Gate Voltage Drain Current

NTE2380

NTE2381

V(BR)DSS VGS = 0, ID = 0.25mA

IDSS

VDS = 500V, VGS = 0

500 –

–

V

–

– 0.25 mA

–

– 0.2 mA

NTE2380 & NTE2381

VDS = 400V, VGS = 0, TJ = +125°C –

Gate–Body Leakage Current, Forward IGSSF

NTE2380

VGSF = 20V, VDS = 0

–

NTE2381

–

– 1.0 mA

– 500 nA

– 100 nA

Gate–Body Leakage Current, Reverse

NTE2380

NTE2381

IGSSR

VGSF = 20V, VDS = 0

–

– 500 nA

–

– 100 nA

ON Characteristics (Note 1)

Gate Threshold Voltage

NTE2380

NTE2381

Static Drain–Source On–Resistance

NTE2380

NTE2381

Forward Transconductance

NTE2380

NTE2381

Dynamic Characteristics

VGS(th)

rDS(on)

VDS = VGS

ID = 0.25mA

ID = 1mA

VGS = 10V, ID = 1A

gFS

ID = 1A

VDS ≥ 7.5V

VDS = 15V

2.0 – 4.0 V

2.0 – 4.5 V

–

–

3

Ω

–

–

6

Ω

1

–

0.5 –

– mhos

– mhos

Input Capacitance

NTE2380

NTE2381

Ciss

VDS = 25V, VGS = 0, f = 1MHz

–

– 400 pF

–

– 100 pF

Output Capacitance

Coss

NTE2380

NTE2381

–

– 150 pF

–

– 200 pF

Reverse Transfer Capacitance

Crss

NTE2380

–

– 40 pF

NTE2381

–

– 80 pF

Switching Characteristics (Note 1)

Turn–On Time

NTE2380

NTE2381

Rise Time

NTE2380

NTE2381

Turn–Off Time

NTE2380

NTE2381

Fall Time

NTE2380

NTE2381

td(on)

ID = 1A,

Rgen = 50Ω

tr

td(off)

tf

VDD [ 200V

VDS = 125V

VDD [ 200V

VDS = 125V

VDD [ 200V

VDS = 125V

VDD [ 200V

VDS = 125V

–

– 60 ns

–

– 50 ns

–

– 50 ns

–

– 100 ns

–

– 60 ns

–

– 150 ns

–

– 30 ns

–

– 50 ns

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Share Link: