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NTE3045

Optoisolator Silicon NPN Darlington Phototransistor Output

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Input LED

Reverse Leakage Current

IR

VR = 3V

Forward Voltage

VF IF = 10mA

Capacitance

C

VR = 0, f = 1MHz

Photodarlington (TA = +25°C, IF = 0 unless otherwise specified)

Collector–Emitter Dark Current

ICEO VCE = 60V

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA

Emitter–Collector Breakdown Voltage V(BR)ECO IE = 100µA

Coupled (TA = +25°C unless otherwise specified)

Collector Output Current

IC

VCE = 1.5V, IF = 10mA

Isolation Surge Voltage

VISO 60Hz Peak AC, 5sec,

Note 2, Note 3

Isolation Resistance

Isolation Capacitance

Switching

RISO

CISO

V = 500V, Note 2

v = 0, f = 1MHz, Note 2

Turn–On Time

Turn–Off Time

Rise Time

Fall Time

ton

VCC = 10V,

toff

RL = 100Ω,

IF = 5mA

tr

tf

Min Typ Max Unit

– 0.05 10 µA

– 1.15 2.0 V

– 18 – pF

––

80 –

5–

1 µA

–V

–V

50 –

7500 –

– mA

–V

– 1011 –

Ω

– 0.2 – pF

– 3.5 – µs

– 95 – µs

– 1 – µs

– 2 – µs

Note 2. For this test LED Pin1 and Pin2 are common and Phototransistor Pin4 and Pin5 are common.

Note 3. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.

654

Pin Connection Diagram

1 23

Anode 1

Cathode 2

N.C. 3

6 N.C.

.070 (1.78) Max

5 Collector

4 Emitter .200 (5.08)

Max

.350 (8.89)

Max

.260

(6.6)

Max

.350

(8.89)

Max

.300 (7.62)

.085 (2.16) Max

.100 (2.54)

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