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NTE3086

Optoisolator Dual NPN Transistor Output

NTE Electronics 

NTE3086

Optoisolator

Dual NPN Transistor Output

Description:

The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon photo-

transistor per channel. This device is constructed with a high voltage insulation, double molded pack-

aging process which offers 7.5KV withstand test capability.

Features:

D Two isolated Channels per Package

D 7500V Withstand Test Voltage

D CTR Minimum: 20%

Absolute Maximum Ratings:

Gallium Arsenide LED (Each Channel)

Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/°C

Forward Current, IF

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA

Peak (Pulse Width 1µs, 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A

Phototransistor (Each Channel)

Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C

Collector–Emitter Breakdow Voltage, V(BR)CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Collector–Base Breakdow Voltage, V(BR)CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V

Emitter–Collector Breakdow Voltage, V(BR)ECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Total Device

Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33mW/°C

Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +250°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Gallium Arsenide LED

Forward Voltage

Reverse Voltage

Reverse Current

Junction Capacitance

VF IF = 20mA

VR IR = 10µA

IR

VR = 3V

V = 0, f = 1MHz

Min Typ Max Unit

– 1.1 1.5 V

3 25 – V

–

– 10 µA

– 80 – pF

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