M4N37 Просмотр технического описания (PDF) - Motorola => Freescale
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M4N37 Datasheet PDF : 8 Pages
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M4N37
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
INPUT LED
Forward Voltage (IF = 10 mA)
TA = 25°C
TA = –55°C
TA = 100°C
VF
0.8
0.9
0.7
Reverse Leakage Current (VR = 6 V)
IR
—
Capacitance (V = 0 V, f = 1 MHz)
CJ
—
OUTPUT TRANSISTOR
Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C)
(VCE = 30 V, TA = 100°C)
ICEO
—
—
Collector–Base Dark Current (VCB = 10 V)
TA = 25°C
TA = 100°C
ICBO
—
Collector–Emitter Breakdown Voltage (IC = 1 mA)
Collector–Base Breakdown Voltage (IC = 100 µA)
Emitter–Base Breakdown Voltage (IE = 100 µA)
V(BR)CEO
30
V(BR)CBO
70
V(BR)EBO
7
DC Current Gain (IC = 2 mA, VCE = 5 V)
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0)
hFE
—
CCE
—
Collector–Base Capacitance (f = 1 MHz, VCB = 0)
Emitter–Base Capacitance (f = 1 MHz, VEB = 0)
CCB
—
CEB
—
COUPLED
Output Collector Current
(IF = 10 mA, VCE = 10 V)
TA = 25°C
TA = –55°C
TA = 100°C
IC (CTR)(2)
10 (100)
4 (40)
4 (40)
Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA)
Turn–On Time
VCE(sat)
—
ton
—
Turn–Off Time
Rise Time
(IC = 2 mA, VCC = 10 V,
RL = 100 Ω)(3)
toff
—
tr
—
Fall Time
tf
Isolation Voltage (f = 60 Hz, t = 1 sec)
Isolation Current(4) (VI–O = 1500 Vpk)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
VISO
IISO
RISO
CISO
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 14.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
—
7500
—
1011
—
Typ(1)
1.15
1.3
1.05
—
18
1
—
0.2
100
45
100
7.8
400
7
19
9
30 (300)
—
—
0.14
7.5
5.7
3.2
4.7
—
8
—
0.2
Max
Unit
1.5
Volts
1.7
1.4
10
µA
—
pF
50
nA
500
µA
20
nA
—
—
Volts
—
Volts
—
Volts
—
—
—
pF
—
pF
—
pF
—
mA (%)
—
—
0.3
Volts
10
µs
10
—
—
—
Vac(pk)
100
µA
—
Ω
2
pF
2
Motorola Optoelectronics Device Data
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