C3390 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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C3390

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC3390

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

55

V

50

V

5

V

100

mA

300

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown

V(BR)CBO

55

—

voltage

Collector to emitter breakdown V(BR)CEO 50

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

100 —

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat) —

—

voltage

Gain bandwidth product

fT

—

200

Collector output capacitance Cob

—

—

Noise figure

NF

—

1.0

Note: 1. The 2SC3390 is grouped by hFE as follows.

B

C

100 to 200 160 to 320

Max

—

—

—

0.5

0.5

320

0.75

0.2

—

3.5

5.0

Unit

V

V

V

µA

µA

V

V

MHz

pF

dB

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 18 V, IE = 0

VEB = 2 V, IC = 0

VCE = 12 V, IC = 2 mA

VCE = 12 V, IC = 2 mA

IC = 10 mA, IB = 1 mA

VCE = 12 V, IC = 2 mA

VCB = 10 V, IE = 0, f = 1 MHz

VCE = 6 V, IC = 0.1 mA,

Rg = 1 kΩ, f = 1 kHz

See characteristic curves of 2SC458(LG).

2

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