2SC3380 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SC3380

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC3380

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

VCBO

300

VCEO

300

VEBO

5

IC

100

PC * 1

1

Tj

150

Storage temperature

Tstg

–55 to +150

Note: 1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

Unit

V

V

V

mA

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V(BR)CBO

300

—

—

V

voltage

IC = 10 µA, IE = 0

Collector to emitter breakdown V(BR)CEO 300

—

—

V

voltage

IC = 1 mA, RBE = ∞

Emitter to base breakdown

voltage

V(BR)EBO

5

—

—

V

IE = 10 µA, IC = 0

Collector cutoff current

I CEO

—

—

1

µA

VCE = 250 V, RBE = ∞

Collector to emitter saturation VCE(sat) —

—

1.5 V

voltage

IC = 20 mA, IB = 2 mA

DC current transfer ratio

hFE

30

—

200

VCE = 20 V, IC = 20 mA

Gain bandwidth product

fT

—

80

—

MHz VCE = 20 V, IC = 20 mA

Collector output capacitance Cob

—

—

4

pF

VCB = 20 V, IE = 0, f = 1 MHz

2

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